AON7403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical.
-RoHS Compliant
-AON7403L is Halogen Free
Features
VDS (V) = -30V
ID = -8A (VGS = -10V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
| Parameter |
Symbol |
Maximum |
Units |
| Drain-Source Voltage |
VDS |
-30 |
V |
| Gate-Source Voltage |
VGS |
±25 |
V |
| Continuous Drain Current B,G |
TC=25°C |
ID |
-20 |
A |
| TC=100°C |
-20 |
| Pulsed Drain Current C |
IDM |
-80 |
| Continuous Drain Current |
TA=25°C |
IDSM |
-8 |
| TA=70°C |
-6 |
| Power Dissipation B |
TC=25°C |
PD |
27 |
W |
| TC=100°C |
11 |
| Power Dissipation A |
TA=25°C |
PDSM |
1.6 |
| TA=70°C |
1 |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
°C |
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
Stock Offer (Hot Sell)
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Quantity |
Brand |
D/C |
Package |
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1668 |
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15+ |
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1678 |
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1700 |
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1710 |
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14+ |
ZIP-25 |
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1711 |
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1721 |
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14+ |
SOP8 |
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1721 |
MICROCHIP |
16+ |
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1722 |
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SOP8 |
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1722 |
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13+ |
DIP-6 |
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1750 |
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1752 |
AD |
16+ |
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1752 |
TI |
16+ |
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1752 |
FUZETEC |
14+ |
SMD |
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1775 |
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14+ |
SOP8 |
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1777 |
TOSHIBA |
14+ |
SOT-89 |
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1778 |
OMRON |
16+ |
RELAY |
| IRF1010N |
1779 |
IR |
16+ |
TO-220 |
| PIC16F913-I/SP |
1782 |
MICROCHIP |
13+ |
DIP |
| FSQ510 |
1800 |
FAIRCHILD |
15+ |
DIP-7 |
| MC9S08AW32CFGE |
1800 |
FREESCALE |
16+ |
QFP44 |
| PC924 |
1800 |
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16+ |
SOP-8 |
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1800 |
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14+ |
TO-220 |
| VN0104N3 |
1800 |
SUPERTEX |
14+ |
TO-92 |
| ZJY-2P |
1800 |
TDK |
14+ |
DIP4 |
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1810 |
TOSHIBA |
16+ |
TO-92 |
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1811 |
IR |
16+ |
TO-247 |
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1820 |
IR |
13+ |
TO-251 |
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1820 |
MICROCHIP |
15+ |
QFN |
| PC410L |
1821 |
SHARP |
16+ |
SOP5 |
| AT24C01 DIP |
1822 |
ATMEL |
16+ |
DIP |
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AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor Images
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